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Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
? Applications
Optical control equipment
Light source for remote control devices
? Dimensions (Unit : mm)
φ 3.8 ± 0.3
? Features
1) Compact ( ? 3.1mm).
4 ? 0.6
φ 3.5
φ 3.1 ± 0.2
Notes:
1. Unspecified tolerance
shall be ± 0.2.
2. Dimension in parenthesis are
show for reference.
2) High efficiency, high output P O ? 8.4mW (I F ? 50mA).
3) Wide radiation angle ? 1/2 ?? 16deg.
4) Peak wavelength well suited to silicon detectors ( ? P ? 940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
? Absolute maximum ratings (Ta = 25 ? C)
2 ?
0.5
1
(2.5)
2
1 Anode
2 Cathode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
75
5
100
500
? 25 to + 85
? 40 to + 85
Unit
mA
V
mW
mA
° C
° C
? Pulse width = 0.1msec, duty ratio 1%
? Electrical and optical characteristics (Ta = 25 ? C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Symbol
P O
I E
V F
I R
λ P
Δλ
θ 1 / 2
tr·tf
f C
Min.
?
5.6
?
?
?
?
?
?
?
Typ.
8.4
18.1
1.3
?
940
40
± 16
1.0
1.0
Max.
?
?
1.5
10
?
?
?
?
?
Unit
mW
mW/sr
V
μ A
nm
nm
deg
μ s
MHz
I F = 50mA
I F = 50mA
I F = 50mA
V R = 3V
I F = 50mA
I F = 50mA
I F = 50mA
I F = 50mA
I F = 50mA
Conditions
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c 2012 ROHM Co., Ltd. All rights reserved.
1/2
2012.06 - Rev.C
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